Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 101 ̄1) semipolar GaN template

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers

Non- and semipolar GaN have great potential to improve the efficiency of light emitting devices due to much reduced internal electric fields. However, heteroepitaxial GaN growth in these crystal orientations suffers from very high dislocation and stacking faults densities. Here, we report a facile method to obtain low defect density non- and semipolar heteroepitaxial GaN via selective area epit...

Structural characterization of non-polar (112 0) and semi-polar (1126) GaN films grown on r-plane sapphire

Thick GaN films, with (1120) or (1126) planes parallel to the r-plane of sapphire, were grown by molecular beam epitaxy using AlN or GaN buffer layers. Characterization by transmission electron microscopy revealed a high density of basal-plane stacking faults (BSFs) in the (1120) non-polar GaN (a-GaN) films. {1120} and {1010} prismatic-plane and {1102} pyramidal-plane stacking faults (SFs) doma...

Galliumnitride Nanostripes with Semipolar Quantum Wells for LED and Laser Applications

We present LEDs and asymmetric waveguide structures with embedded nanostripes and semipolar {101̄1} quantum wells. All samples are based on c-plane GaN/AlGaN templates grown heteroepitaxially on c-plane sapphire substrates by metal organic vapour phase epitaxy. The nanostripes have a periodicity of 250 nm and were achieved by selective area epitaxy with dielectric growth masks structured on full...

Fabrication and optical properties of nano-structured semipolar InGaN/GaN quantum wells on c-plane GaN template

One-dimensional exciton luminescence induced by extended defects in nonpolar GaN Al GaN quantum wells

In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either aor m-plane GaN templates for Al contents set below 15%. In order to reduce the density of extended defects, the templates have been processed using the epitaxial lateral overgrowth technique. As expected for polarization-free heterostructures, the larger the QW width for a given...